型号:

IXTH130N10T

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 100V 130A TO-247
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXTH130N10T PDF
产品目录绘图 TO-247AD 3-Leads
标准包装 30
系列 TrenchMV™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 130A
开态Rds(最大)@ Id, Vgs @ 25° C 9.1 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 4.5V @ 250µA
闸电荷(Qg) @ Vgs 104nC @ 10V
输入电容 (Ciss) @ Vds 5080pF @ 25V
功率 - 最大 360W
安装类型 通孔
封装/外壳 TO-247-3
供应商设备封装 TO-247
包装 管件
相关参数
AL-36FR X 6" 3M TAPE POLY-FOIL 6" X 1FT
IXTH152N085T IXYS MOSFET N-CH 85V 152A TO-247
IXTP16N50P IXYS MOSFET N-CH 500V 16A TO-220
AL-36NC X 1" 3M TAPE POLY-FOIL 1" X 1YD
IRFB4410ZPBF International Rectifier MOSFET N-CH 100V 97A TO-220AB
AL-36FR X 1" 3M TAPE POLY-FOIL 1" X 1YD
IRFB5620PBF International Rectifier MOSFET N-CH 200V 25A TO-220AB
FAM1-10-10-0.2 t-Global Technology FAM1 SERIES 10X10X0.2MM
8.26-4-AB5050 3M (TC) EMI ABSORBER 8.26" X 4YDS
IRF1324STRL-7PP International Rectifier MOSFET N-CH 24V 429A D2PAK-7
8.26-4-AB5030 3M (TC) EMI ABSORBER 8.26" X 4YDS
IRF1324STRL-7PP International Rectifier MOSFET N-CH 24V 429A D2PAK-7
8.26-4-AB5020 3M (TC) EMI ABSORBER 8.26" X 4YDS
IRF1324STRL-7PP International Rectifier MOSFET N-CH 24V 429A D2PAK-7
8.26-4-AB5010 3M (TC) EMI ABSORBER 8.26" X 4YDS
175A-EU Hammond Manufacturing TRANSF AUTO 230-115V 100VA EUROP
TR110 B&K Precision ISOLATION TRANSFORMER UL LST
4.13-4-AB5050 3M (TC) EMI ABSORBER 4.13" X 4YDS
CV2402300 Hammond Manufacturing TRANSFORMER - CONSTANT VOLTAGE
8.26X12-6-AB5050 3M (TC) EMI ABSORBER 8.26" X 12" 6/PACK